This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Minkyung Bae and Semiconductor Device Innovation.
Introduction
Minkyung Bae is an inventor based in Suwon-si, South Korea, whose patent work concerns semiconductor device design. She is associated with Samsung Electronics Ltd.
Latest Patents
Bae is named on 1 patent, titled “Semiconductor device.” The invention describes a device with a peripheral circuit structure and a cell structure stacked above it. The cell structure includes vertically spaced gate electrodes and a channel structure that passes through them. A common source layer covers one end of the channel structure and contains two regions with impurities of different conductivity types. One region connects to at least part of the channel layer.
Career Highlights
The available information identifies Bae’s work at Samsung Electronics Ltd. and her contribution to semiconductor device technology through the patent described above.
Collaborations
Bae’s listed coworkers include Youngtaek Oh and Jiwoong Kim. Their names are provided as collaborators, though the available details do not specify their individual roles in the patent.
Conclusion
Minkyung Bae’s patent reflects work on semiconductor structures that integrate vertical channel and gate components with a differentiated common source layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile