Minghua Zhang

Title: Innovations of Minghua Zhang in FinFET Technology

Introduction

Minghua Zhang is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of FinFET structures. His innovative approaches have led to advancements that enhance the performance of electronic devices.

Latest Patents

Minghua Zhang holds a patent for a method of forming strained source and drain regions in a P-type FinFET structure. This patent outlines a process that includes depositing an isolation layer on the FinFET structure, applying lithography and etching processes, and selectively epitaxially growing semiconductive materials to increase strain in the source and drain regions. This method is crucial for improving the efficiency and performance of FinFET devices.

Career Highlights

Minghua Zhang is associated with Shanghai Huali Microelectronics Corporation, where he continues to work on cutting-edge semiconductor technologies. His expertise in FinFET structures has positioned him as a key player in the industry, contributing to the advancement of microelectronics.

Collaborations

Minghua has collaborated with notable colleagues such as Yi Ding and Jingxun Fang. Their combined efforts in research and development have fostered innovation within their field.

Conclusion

Minghua Zhang's contributions to FinFET technology exemplify the impact of innovative thinking in the semiconductor industry. His work not only advances technology but also paves the way for future developments in electronic devices.