Blacksburg, VA, United States of America

Ming Xiao

This inventor holds 5 USPTO granted patents and 2 published patent applications. Top assignee: Virginia Tech Intellectual Properties Inc.. Active years: 2024-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ming Xiao. Retrieved from https://idiyas.com/inventor/ming-xiao-w71864ry

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 5 

% Patents Active = 60.0

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2024-2026

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5 patents (USPTO):Explore Patents

Title: Innovations of Inventor Ming Xiao

Introduction

Ming Xiao is a prominent inventor based in Blacksburg, Virginia, known for his contributions to semiconductor technology. He holds three patents that showcase his expertise in developing advanced electronic devices. His work has significant implications for the field of electronics and materials science.

Latest Patents

One of Ming Xiao's latest patents is for a "Monolithic Cascode Multi-Channel High Electron Mobility Transistors." This invention provides a semiconductor device that includes a first transistor with a first gate terminal, a first source terminal, and a first drain terminal. The first transistor is a depletion mode transistor and features a plurality of two-dimensional carrier channels of either n-type or p-type conductivity. Additionally, the device includes a second transistor, which is an enhancement mode transistor, with interconnects forming electrical connections between the two transistors, all fabricated on the same wafer or substrate.

Another significant patent is for "Charge Balanced Power Schottky Barrier Diodes." This diode comprises a semiconductor region with at least one two-dimensional carrier channel of a first conductivity type. The design ensures that the net charge in the depletion region is substantially equal to the net charge of the two-dimensional channel when the diode is under reverse bias. This innovative approach enhances the performance and efficiency of the diode.

Career Highlights

Ming Xiao is affiliated with Virginia Tech Intellectual Properties, Inc., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing the understanding and application of high electron mobility transistors and Schottky barrier diodes.

Collaborations

Ming Xiao collaborates with Yuhao Zhang, contributing to the innovative research and development efforts at their institution. Their partnership exemplifies the collaborative spirit of scientific inquiry and technological advancement.

Conclusion

Ming Xiao's contributions to semiconductor technology through his patents reflect his innovative spirit and dedication to advancing electronic devices. His work continues to influence the field and inspire future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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