Ming-Ta Yang

Title: The Innovative Contributions of Ming-Ta Yang

Introduction

Ming-Ta Yang is a notable inventor based in Da-Nei Hsiang, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of dynamic random-access memory (DRAM) devices. His innovative methods have paved the way for advancements in memory storage solutions.

Latest Patents

Ming-Ta Yang holds a patent for a method for forming a DRAM having improved capacitor dielectric layers. This patent describes a method of fabricating a DRAM device that incorporates nitride/oxide or tantalum pentoxide dielectric layers. The process includes forming field oxide regions on a substrate to define active regions, creating a MOSFET at each active region, and generating a doped poly-Si bottom electrode of a capacitor in electrical connection with the MOSFET. The method also involves removing surface oxide from the bottom electrode and depositing dielectric layers to enhance the device's performance. He has 1 patent to his name.

Career Highlights

Ming-Ta Yang is associated with Mosel Vitelic Corporation, where he has contributed to various projects aimed at improving semiconductor technologies. His work has been instrumental in enhancing the efficiency and reliability of DRAM devices, which are crucial for modern computing applications.

Collaborations

Ming-Ta Yang has collaborated with fellow inventor Chih-hsun Chu, working together to advance their research and development efforts in the semiconductor industry.

Conclusion

Ming-Ta Yang's innovative methods and contributions to DRAM technology highlight his importance in the field of semiconductor research. His work continues to influence advancements in memory storage solutions, making a lasting impact on the industry.