The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2000
Filed:
Jun. 02, 1998
Ming-Ta Yang, Da-Nei Hsiang, TW;
Chih-Hsun Chu, Hsinchu, TW;
Mosel Vitelic, Inc., Hsin Chu, TW;
Abstract
A method of fabricating a DRAM device having nitride/oxide or tantalum pentoxide dielectric layers. The method includes: forming field oxide regions on a substrate to define active regions; forming at each active region a MOSFET comprising a top dielectric layer; forming a contact window in the MOSFET top dielectric layer; generating a doped poly-Si bottom electrode of a capacitor in electrical connection with the MOSFET through the contact window; removing surface oxide of the bottom electrode using both chemical and inductive coupled plasma (ICP) treatments; depositing nitride/oxide dielectric layers or a tantalum pentoxide dielectric layer on the ICP-treated bottom electrode; generating a doped poly-Si top electrode of the capacitor.