Ming-Shih Tsai

Title: The Innovations of Ming-Shih Tsai

Introduction

Ming-Shih Tsai is a notable inventor based in Kaohsiung, Taiwan. He has made significant contributions to the field of thin film transistors, showcasing his expertise and innovative spirit through his patented inventions.

Latest Patents

Ming-Shih Tsai holds a patent for a "Thin film transistor with sub-gates and Schottky source/drain and a manufacturing method of the same." This invention discloses a thin film transistor that eliminates the conventional doping of source/drain and the subsequent annealing steps. By doing so, the complexity and costs associated with the manufacturing process are significantly reduced. Additionally, the process temperature is lowered, enhancing efficiency. The thin film transistor can operate in both n-type and p-type channel modes, depending on the biased voltage of the sub-gate. An electric junction is formed by induction using the bias voltage applied on the sub-gate, replacing the traditional source/drain extensions and consequently reducing off-state leakage current.

Career Highlights

Ming-Shih Tsai is associated with S.M. Sze, a company known for its advancements in semiconductor technology. His work has contributed to the development of more efficient electronic components, which are crucial in modern technology.

Collaborations

Ming-Shih Tsai has collaborated with notable colleagues such as Horng-Chih Lin and Tiao-Yuan Huang, further enhancing the innovative environment in which he works.

Conclusion

Ming-Shih Tsai's contributions to the field of thin film transistors exemplify his innovative approach to technology. His patent reflects a significant advancement in manufacturing processes, showcasing his role as a key inventor in the industry.