The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2003
Filed:
Jun. 14, 2001
Thin film transistor with sub-gates and schottky source/drain and a manufacturing method of the same
S. M. Sze, Hsinchu, TW;
Abstract
The present invention discloses a thin film transistor with sub-gates and Schottky source/drain and a method of manufacturing the same. Doping of source/drain, and the following annealing steps used conventionally are omitted and the complexity of process and process costs are reduced. The temperature of the process is also decreased. A thin film transistor with sub-gates and Schottky source/drain of the invention is able to operate in both the n type and p type channel modes on the same transistor element depending on the biased voltage of the sub-gate. Moreover, an electric junction is formed by induction, using bias voltage applied on the sub-gate, which takes the place of the conventional source/drain extensions. Consequently, the off-state leakage current is reduced.