This inventor holds 1 USPTO granted patent. Top assignee: Advanced Micro Devices Corporation. Active years: 2000.
Company Filing History:
Years Active: 2000
Title: The Innovative Contributions of Ming-Rin Lin
Introduction
Ming-Rin Lin is a prominent inventor based in Cupertino, California. She has made significant contributions to the field of semiconductor technology. Her work focuses on advanced methods for fabricating interconnection levels in integrated circuits.
Latest Patents
Ming-Rin Lin holds a patent for a "Subtractive dual damascene semiconductor device." This innovative method involves fabricating an interconnection level of conductive lines and connecting vias separated by insulation for integrated circuits and substrate carriers. The process utilizes a reverse damascene technique to form conductive lines and vias. The method begins with etching conductive line openings, filling them with conductive material, and planarizing the surfaces. A via pattern is then aligned, allowing for the creation of openings that are filled with insulating material. This results in a dual damascene interconnection level that enhances the performance of semiconductor devices.
Career Highlights
Ming-Rin Lin has established herself as a key figure in the semiconductor industry. She works at Advanced Micro Devices Corporation, where her expertise in semiconductor fabrication is highly valued. Her innovative approaches have contributed to advancements in integrated circuit technology.
Collaborations
Throughout her career, Ming-Rin Lin has collaborated with notable colleagues, including Rich K Klein and Steven C Avanzino. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.
Conclusion
Ming-Rin Lin's contributions to semiconductor technology exemplify her dedication to innovation and excellence. Her patent for the subtractive dual damascene semiconductor device showcases her ability to push the boundaries of technology. As a leading inventor, she continues to inspire future advancements in the field.
