Taoyuan, Taiwan

Ming-kai Hsueh

This inventor holds 1 USPTO granted patent. Top assignee: Chroma Ate Inc.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ming-kai Hsueh. Retrieved from https://idiyas.com/inventor/ming-kai-hsueh-x7i46a6k

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: The Innovations of Ming-kai Hsueh

Introduction

Ming-kai Hsueh is a notable inventor based in Taoyuan, Taiwan. He has made significant contributions to the field of semiconductor technology. His work focuses on enhancing the precision and reliability of detection systems used in semiconductor surface morphology.

Latest Patents

Ming-kai Hsueh holds a patent for a "Detection system, compensation method, and computer readable medium for semiconductor surface morphology." This invention provides a detection system and compensation method that applies to semiconductor surface morphology. It offers feature information corresponding to spectral signals to a neural network model. The system is designed to enhance the precision of detecting semiconductor surface morphology and improve the reliability of the detection system.

Career Highlights

Ming-kai Hsueh is currently employed at Chroma Ate Inc., where he continues to innovate in the semiconductor field. His work has been instrumental in developing advanced technologies that address the challenges faced in semiconductor manufacturing.

Collaborations

Ming-kai has collaborated with notable colleagues such as Hao-chiang Hu and Wei-che Chang. Their combined expertise contributes to the advancement of technology in their field.

Conclusion

Ming-kai Hsueh's contributions to semiconductor technology through his innovative patent demonstrate his commitment to enhancing detection systems. His work continues to influence the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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