Ming-Hung Hsieh

Title: Ming-Hung Hsieh: Innovator in Semiconductor Technology

Introduction

Ming-Hung Hsieh is a prominent inventor based in Hefei, China. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor structure and its manufacturing method.

Latest Patents

Ming-Hung Hsieh holds a patent for a semiconductor structure and manufacturing method thereof. The patent describes a semiconductor structure that includes a substrate with trenches arranged in parallel intervals. The word line (WL) structure is located within these trenches and consists of a dielectric layer and a conductive layer. The dielectric layer covers both the bottom surface and the sidewall of the conductive layer. The conductive layer is composed of a first conductive layer and a second conductive layer, with a first component doped in the second conductive layer. This innovative design enhances the efficiency and performance of semiconductor devices.

Career Highlights

Ming-Hung Hsieh is currently employed at Changxin Memory Technologies, Inc. His work at this leading company in the semiconductor industry has allowed him to focus on advancing memory technology. His expertise and innovative mindset have positioned him as a key player in the development of cutting-edge semiconductor solutions.

Collaborations

Ming-Hung Hsieh has collaborated with notable colleagues, including Renhu Li and Yong Lu. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas within the semiconductor field.

Conclusion

Ming-Hung Hsieh is a distinguished inventor whose contributions to semiconductor technology are noteworthy. His patent for a semiconductor structure showcases his innovative approach to solving complex challenges in the industry. Through his work at Changxin Memory Technologies, Inc., he continues to make significant strides in advancing semiconductor technology.