Hsinchu, Taiwan

Ming-Hsien Shih

This inventor holds 1 USPTO granted patent. Top assignee: Richtek Technology Corporation. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ming-Hsien Shih. Retrieved from https://idiyas.com/inventor/ming-hsien-shih-1qv91yjb

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Ming-Hsien Shih and a Temperature-Stable Bandgap Reference Circuit

Introduction

Ming-Hsien Shih is an inventor associated with Hsinchu, Taiwan, and Richtek Technology Corporation. His patent work includes a circuit design intended to produce a stable reference voltage despite temperature changes.

Latest Patents

Shih is associated with 1 patent, titled “Bandgap Reference Circuit with Leakage Current Compensation.” The invention uses two bipolar junction transistors biased at different current densities to establish a difference between their base-emitter voltages. One transistor helps determine a complementary-to-absolute-temperature signal, while a differential sensing resistor and feedback circuit help derive a proportional-to-absolute-temperature signal. The circuit combines these signals to generate a reference voltage with a zero temperature coefficient, while compensating for leakage current.

Career Highlights

Shih’s listed company affiliation is Richtek Technology Corporation. His patent reflects work on analog circuit design, particularly temperature-compensated voltage references.

Collaborations

Tai-Wei Chang is identified as Shih’s coworker. The available information does not specify their particular projects or contributions together.

Conclusion

Ming-Hsien Shih’s patent describes a bandgap reference circuit that combines temperature-dependent signals to support a stable output voltage, highlighting his contribution to semiconductor circuit innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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