This inventor holds 2 USPTO granted patents. Top assignee: Other. Active years: 2002-2003.
Company Filing History:
Years Active: 2002-2003
Title: Innovations of Ming-Hong Lee in Thin Film Crystal Growth
Introduction
Ming-Hong Lee is an accomplished inventor based in Richmond, CA (US). He has made significant contributions to the field of materials science, particularly in the area of thin film crystal growth. With a total of 2 patents, his work has advanced the understanding and application of laser annealing techniques.
Latest Patents
One of Ming-Hong Lee's latest patents focuses on "Thin film crystal growth by laser annealing." This innovative process involves transforming a layer of material from a first state to a second state through the application of energy from an energy beam. Specifically, it utilizes large direction- and location-controlled p-Si grain growth, which is achieved by recrystallizing amorphous silicon through superpositioned laser irradiation. The method employs a first laser beam to melt an amorphous silicon (a-Si) film, creating a temperature gradient. After an initial delay, a second laser beam with a shorter pulse duration is superpositioned with the first beam. This technique allows for spontaneous nucleation in the supercooled liquid-Si when the temperature drops below the nucleation threshold. The process is carefully controlled to ensure that grains nucleated in the periphery can grow into the liquid-Si, ultimately leading to the desired crystal structure.
Career Highlights
Ming-Hong Lee has established himself as a leading figure in his field through his innovative research and development efforts. His work has not only contributed to academic knowledge but has also paved the way for practical applications in various industries.
Collaborations
Ming-Hong Lee has collaborated with notable colleagues, including Costas P Grigoropoulos and Seung-Jae Moon. These partnerships have further enriched his research and expanded the impact of his inventions.
Conclusion
Ming-Hong Lee's contributions to thin film crystal growth through laser annealing represent a significant advancement in materials science. His innovative techniques and collaborative efforts continue to influence the field and inspire future research.