Ming-Feng Chang

Title: The Innovations of Ming-Feng Chang

Introduction

Ming-Feng Chang is a notable inventor based in Taichung, Taiwan. He has made significant contributions to the field of non-volatile memory technology. His innovative approach has led to the development of a unique manufacturing method that enhances memory performance.

Latest Patents

Ming-Feng Chang holds a patent for a manufacturing method of a non-volatile memory. This patent describes a process that involves forming a tunneling dielectric layer, a first conductive pattern, and isolation structures on a substrate. The method utilizes a first photoresist layer as a mask to partially remove the first conductive pattern, creating an opening that exposes the substrate. An insulating layer is then formed to fill this opening and cover the conductive pattern and isolation structures. The process continues with the use of a second photoresist layer to remove the insulating layer surrounding the first conductive pattern, resulting in a patterned insulating layer with a second opening. This innovative design allows for the formation of a floating gate and a control gate, enhancing the functionality of non-volatile memory devices.

Career Highlights

Ming-Feng Chang is currently employed at Powerchip Technology Corporation, where he continues to push the boundaries of memory technology. His work has been instrumental in advancing the capabilities of non-volatile memory solutions.

Collaborations

Ming-Feng Chang has collaborated with talented individuals such as Chih-Ping Chung and Ming-Yu Ho. Their combined expertise has contributed to the success of various projects within the field of memory technology.

Conclusion

Ming-Feng Chang's innovative contributions to non-volatile memory technology exemplify the impact of dedicated inventors in the tech industry. His patent and ongoing work at Powerchip Technology Corporation highlight the importance of innovation in enhancing memory performance.