This inventor holds 2 USPTO granted patents. Top assignees: Industrial Technology Research Institute, Other. Active years: 2001-2002.
Company Filing History:
1 out of 9,303 
1 out of 834,453 Years Active: 2001-2002
Title: Innovations of Ming-Che Kao
Introduction
Ming-Che Kao is a notable inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of trench MOS devices and their associated termination structures. With a total of 2 patents to his name, his work has implications for various types of semiconductor devices.
Latest Patents
Ming-Che Kao's latest patents include a trench MOS device and a method of forming trench MOS devices and termination structures. The trench MOS device patent discloses a termination structure for power trench MOS devices, which can be Schottky diodes, IGBTs, or DMOS, depending on the semiconductor substrate prepared. The termination structure comprises a semiconductor substrate with a trench, a spacer-like MOS gate, and a termination structure oxide layer. The method for fabricating these devices involves forming trenches, thermal oxidation, and the deposition of conductive materials, among other steps.
Career Highlights
Throughout his career, Ming-Che Kao has worked with the Industrial Technology Research Institute, where he has contributed to advancements in semiconductor technology. His expertise in trench MOS devices has positioned him as a key figure in this area of research and development.
Collaborations
Ming-Che Kao has collaborated with notable colleagues such as Chih-Wei Hsu and Chung-Min Liu. Their combined efforts have furthered the understanding and application of trench MOS technology.
Conclusion
Ming-Che Kao's innovations in trench MOS devices and their termination structures highlight his significant role in semiconductor technology. His patents reflect a commitment to advancing the field and improving device performance.