Taichung, Taiwan

Ming-Chang Hsu

This inventor holds 1 USPTO granted patent. Top assignee: Hiwin Mikrosystem Corporation. Active years: 2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ming-Chang Hsu. Retrieved from https://idiyas.com/inventor/ming-chang-hsu-leltvwty

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2023

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1 patent (USPTO):Explore Patents

Title: Ming-Chang Hsu: Inventor of a High-Frequency Rotating Structure

Introduction

Ming-Chang Hsu is an inventor associated with Taichung, Taiwan, and Hiwin Mikrosystem Corporation. His patent work includes a design for a high-frequency rotating structure featuring a permanent-magnet rotor with grooves and magnetic barrier spaces.

Latest Patents

Hsu is credited with 1 patent: “High-frequency rotating structure with permanent magnet rotor having grooves and magnetic barrier spaces.” The invention describes an annular rotating element with a quincuncial outer periphery, radially arranged grooves that hold magnetic assemblies, and hole-shaped magnetic barrier spaces connected to the ends of the grooves. It also defines distances between the groove and barrier-space walls and the rotating element’s outer surface, providing a geometric framework for the rotor design.

Career Highlights

Hsu’s listed invention is associated with Hiwin Mikrosystem Corporation. The patent focuses on the structure and arrangement of components in a high-frequency rotating element.

Collaborations

Ruei-Bin Shiao and Cheng-Te Chi are identified as Hsu’s coworkers. The available information does not specify their roles in the patent or their contributions to the invention.

Conclusion

Ming-Chang Hsu’s patent documents a rotor design that combines magnetic assemblies, grooves, and barrier spaces in an annular rotating structure.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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