Taejon, South Korea

Mincheol Shin

This inventor holds 2 USPTO granted patents. Top assignee: Electronics and Telecommunications Research Institute. Active years: 2001-2002.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mincheol Shin. Retrieved from https://idiyas.com/inventor/mincheol-shin-epy22chb

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 50.0

Average Co-Inventor Count = 3.0

ph-index = 2

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2001-2002

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2 patents (USPTO):Explore Patents

Title: Mincheol Shin: Innovator in Single Electron Devices

Introduction: Mincheol Shin is a prominent inventor based in Taejon, South Korea. He has made significant contributions to the field of electronics, particularly in the development of single electron devices. With a total of 2 patents to his name, Shin's work is recognized for its innovative approach and practical applications.

Latest Patents: One of Mincheol Shin's latest patents is a single electron device using ultra-thin metal film and the method for fabricating the same. This device features weak links with a bottle-neck figure, replacing the traditional tunnel junction found in prior devices. The weak links can be easily formed on the same substrate through simple processes, facilitating the integration of the single electron device.

Career Highlights: Mincheol Shin is affiliated with the Electronics and Telecommunications Research Institute, where he continues to push the boundaries of technology. His work has garnered attention for its potential to revolutionize electronic devices and systems.

Collaborations: Some of his notable coworkers include Kyoungwan Park and Seongjae Lee, who have collaborated with him on various projects within the institute.

Conclusion: Mincheol Shin's contributions to the field of electronics, particularly through his innovative patents, highlight his role as a key figure in advancing technology. His work continues to inspire future developments in single electron devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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