Min Won Kim

Seoul, South Korea

Min Won Kim

USPTO Granted Patents = 1 

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2021

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1 patent (USPTO):Explore Patents

Title: Min Won Kim: Innovator in Two-Terminal Vertical 1T-DRAM Technology

Introduction: Min Won Kim is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the development of innovative memory devices. His work focuses on enhancing the efficiency and performance of dynamic random-access memory (DRAM) systems.

Latest Patents: Min Won Kim holds a patent for a two-terminal vertical 1T-DRAM and the method of fabricating the same. This invention discloses a two-terminal vertical 1T-DRAM that includes a cathode layer made of a first-type high-concentration semiconductor layer. The design also features a base region comprising a second-type low-concentration semiconductor layer formed on the cathode layer, along with a first-type low-concentration semiconductor layer on the second-type layer. Additionally, an anode layer is formed of a second-type high-concentration semiconductor layer on the first-type low-concentration semiconductor layer. This innovative approach aims to improve the performance and scalability of memory devices.

Career Highlights: Min Won Kim is associated with the Industry-University Cooperation Foundation at Hanyang University. His role in this institution allows him to bridge the gap between academic research and practical applications in the industry. His expertise in semiconductor technology has positioned him as a key figure in advancing memory device innovations.

Collaborations: Throughout his career, Min Won Kim has collaborated with notable colleagues, including Jea Gun Park and Seung Hyun Song. These collaborations have contributed to the development of cutting-edge technologies in the field of semiconductors.

Conclusion: Min Won Kim's contributions to the field of semiconductor technology, particularly through his patent for the two-terminal vertical 1T-DRAM, highlight his innovative spirit and dedication to advancing memory device technology. His work continues to influence the industry and pave the way for future advancements.

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