The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2021
Filed:
Nov. 30, 2017
Applicant:
Industry-university Cooperation Foundation Hanyang University, Seoul, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 27/102 (2006.01); H01L 29/87 (2006.01);
U.S. Cl.
CPC ...
H01L 27/108 (2013.01); H01L 27/1027 (2013.01); H01L 29/87 (2013.01);
Abstract
The present invention discloses a two-terminal vertical 1T-DRAM and a method of fabricating the same. According to one embodiment of the present invention, the two-terminal vertical 1T-DRAM includes a cathode layer formed of a first-type high-concentration semiconductor layer; a base region including a second-type low-concentration semiconductor layer formed on the cathode layer and a first-type low-concentration semiconductor layer formed on the second-type low-concentration semiconductor layer; and an anode layer formed of a second-type high-concentration semiconductor layer on the first-type low-concentration semiconductor layer.