Pohang, South Korea

Min Sung

This inventor holds 1 USPTO granted patent. Top assignee: Pohang University of Science and Technology Foundation. Active years: 2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Min Sung. Retrieved from https://idiyas.com/inventor/min-sung-xsxsji45

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2017

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1 patent (USPTO):Explore Patents

Title: Min Sung - Innovator in Sensor Technology

Introduction

Min Sung is a notable inventor based in Pohang-si, South Korea. He has made significant contributions to the field of sensor technology, particularly through his innovative patent that enhances the sensitivity of sensors.

Latest Patents

Min Sung holds a patent for a "Sensor using sensing mechanism having combined static charge and field effect transistor." This invention relates to a sensor that utilizes a unique sensing mechanism, which includes a substrate, source and drain units, a channel unit, and a membrane that responds to external signals. The design allows for improved sensitivity by measuring changes in the electric field of the channel unit, making it less susceptible to external electric fields.

Career Highlights

Min Sung is associated with the Postech Academy-Industry Foundation, where he continues to develop and refine his innovative ideas. His work focuses on advancing sensor technology, which has applications in various industries.

Collaborations

He has collaborated with notable colleagues such as Won Kyu Moon and James Edward West, contributing to the advancement of technology in their respective fields.

Conclusion

Min Sung's contributions to sensor technology exemplify the innovative spirit of modern inventors. His work not only enhances the functionality of sensors but also paves the way for future advancements in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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