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Title: Min-Lu Kao: Innovator in High Electron Mobility Transistors
Introduction
Min-Lu Kao is a distinguished inventor based in Chiayi, Taiwan. He is recognized for his contributions to the field of semiconductor technology, particularly in the development of high electron mobility transistors. His innovative work has led to advancements that are crucial for various electronic applications.
Latest Patents
Min-Lu Kao holds a patent for a high electron mobility transistor. This invention includes a growth substrate, a lattice matching layer, a back-barrier layer, an electron blocking layer, a channel layer, an active layer, a source, a gate, and a drain. The lattice matching layer and the back-barrier layer are formed on the growth substrate, with the back-barrier layer consisting of GaN doped with carbon. The electron blocking layer, which is formed on the back-barrier layer, includes AlGaN with a doping percentage of 3-5% for Al atoms and 95-97% for Ga atoms. The thickness of the electron blocking layer ranges from 2 to 5 nm. The channel layer and the active layer are formed on the electron blocking layer, while the source, gate, and drain are constructed on the active layer. This patent showcases his expertise in enhancing the performance of electronic devices.
Career Highlights
Throughout his career, Min-Lu Kao has worked with notable institutions, including National Yang Ming Chiao Tung University and National Chung Shan Institute of Science and Technology. His roles in these organizations have allowed him to contribute significantly to research and development in semiconductor technology.
Collaborations
Min-Lu Kao has collaborated with esteemed colleagues such as Edward Yi Chang and You-Chen Weng. These partnerships have fostered innovation and have been instrumental in advancing their shared research goals.
Conclusion
Min-Lu Kao's contributions to the field of high electron mobility transistors exemplify his dedication to innovation in semiconductor technology. His work continues to influence the development of advanced electronic devices.