Icheon, South Korea

Min Ho Ha

This inventor holds 1 USPTO granted patent. Top assignee: Hynix Semiconductor Inc.. Active years: 2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Min Ho Ha. Retrieved from https://idiyas.com/inventor/min-ho-ha

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2010

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1 patent (USPTO):Explore Patents

Title: Min Ho Ha: Innovator in Semiconductor Technology

Introduction

Min Ho Ha is a prominent inventor based in Icheon, South Korea. He has made significant contributions to the field of semiconductor technology. His innovative approach has led to the development of a unique method for forming semiconductor devices.

Latest Patents

Min Ho Ha holds a patent for a "Method for forming a semiconductor device having recess channel." This patent outlines a comprehensive process that includes forming a hard mask film pattern, creating first trenches through etching, and implementing ion implantation techniques. The method ultimately results in the formation of bulb-type trenches that serve as recess channels, enhancing the performance of semiconductor devices.

Career Highlights

Min Ho Ha is currently employed at Hynix Semiconductor Inc., a leading company in the semiconductor industry. His work focuses on advancing semiconductor fabrication techniques, which are crucial for the development of modern electronic devices. His expertise and innovative methods have positioned him as a valuable asset in his field.

Collaborations

Throughout his career, Min Ho Ha has collaborated with notable colleagues, including Jin Yul Lee and Seon Yong Cha. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Min Ho Ha's contributions to semiconductor technology exemplify the spirit of innovation. His patented methods are paving the way for advancements in the industry, showcasing his dedication to enhancing semiconductor device performance.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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