Brooklyn, NY, United States of America

Mikhail Mordkovich


Average Co-Inventor Count = 1.0

ph-index = 3

Forward Citations = 40(Granted Patents)


Company Filing History:


Years Active: 2002-2008

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7 patents (USPTO):Explore Patents

Title: Mikhail Mordkovich: Innovator in Transistor Technology

Introduction

Mikhail Mordkovich is a notable inventor based in Brooklyn, NY, with a significant contribution to the field of electronics. He holds a total of seven patents, showcasing his expertise and innovative spirit in developing advanced technologies.

Latest Patents

Mordkovich's latest patents include an "Automatic biasing and protection circuit for field effect transistor (FET) devices." This invention features a transistor biasing circuit that employs a negative feedback loop control circuit to establish the gate bias voltage in the output transistors of a power amplifier. The design incorporates a current sensor in series with the drain of the transistor, which feeds a DC signal into a DC amplifier. The output of the DC amplifier drives a gate bias integrator, forming a DC control loop that maintains the bias point while protecting the output transistor from excessive temperature and power dissipation.

Another significant patent is the "Transient protection circuit of Darlington amplifier." This protection circuit is designed to prevent destructive voltage overshoot conditions in Darlington amplifiers, which consist of a pair of transistors connected in a Darlington configuration. The circuit includes a biasing network that supplies a bias voltage to the transistors, along with a pair of de-coupling capacitors. The output capacitor has a larger capacitance than the input capacitor, effectively preventing excessive voltage from developing on the transistors.

Career Highlights

Throughout his career, Mikhail Mordkovich has worked with various companies, including Scientific Components Corporation. His work has significantly impacted the development of reliable and efficient electronic components.

Collaborations

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Conclusion

Mikhail Mordkovich's contributions to transistor technology through his innovative patents demonstrate his commitment to advancing the field of electronics. His work continues to influence the design and functionality of electronic devices today.

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