Mike Hsiao-Hui Chen

Title: Mike Hsiao-Hui Chen: Innovator in Semiconductor Technology

Introduction

Mike Hsiao-Hui Chen is a notable inventor based in Pflugerville, TX (US). He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent related to shallow trench isolation.

Latest Patents

One of Mike's key patents is titled "Capped shallow trench isolation and method of formation." This patent describes a method for forming a capped shallow trench isolation (CaSTI) structure. The process begins by etching a trench opening, which is then filled with an oxide or similar trench fill material through a deposition and chemical mechanical polish (CMP) step. The plug is reactive ion etched (RIE) to create a recessed plug region. A silicon nitride or oxynitride capping layer is subsequently formed over the recessed plug region, providing protection from erosion during active area preparation, cleaning, and processing.

Career Highlights

Mike Hsiao-Hui Chen is associated with Motorola Corporation, where he has been instrumental in advancing semiconductor technologies. His work has contributed to the development of more efficient and reliable electronic components.

Collaborations

Throughout his career, Mike has collaborated with notable colleagues, including Keith E Witek and Stephen S Poon. These collaborations have fostered innovation and enhanced the quality of their collective work in the semiconductor industry.

Conclusion

Mike Hsiao-Hui Chen is a distinguished inventor whose contributions to semiconductor technology have made a lasting impact. His innovative patent on capped shallow trench isolation exemplifies his commitment to advancing the field.