Mikalai Audzeyeu

Title: Mikalai Audzeyeu: Innovator in Non-Volatile Memory Technology

Introduction

Mikalai Audzeyeu is a prominent inventor based in Minsk, Belarus. He has made significant contributions to the field of non-volatile memory technology. His innovative work has led to the development of a unique memory cell design that enhances the efficiency and footprint of memory arrays.

Latest Patents

Mikalai holds a patent for a "Floating gate inverter type memory cell and array." This non-volatile memory (NVM) cell and array includes a control capacitor, tunneling capacitor, CMOS inverter, and output circuit. The CMOS inverter consists of PMOS and NMOS inverter transistors. The design features a common floating gate shared by the control capacitor, tunneling capacitor, and the PMOS and NMOS inverter transistors, which are programmed and erased using Fowler-Nordheim tunneling. The output circuit incorporates PMOS and NMOS select transistors, optimizing the layout area of the NVM cell and allowing for the design of arrays with smaller footprints. Notably, the tunneling capacitor can be excluded, further minimizing the layout area, with the NMOS and PMOS inverter transistors functioning as tunneling capacitors for programming and erasing the cell.

Career Highlights

Mikalai Audzeyeu is currently employed at Tower Semiconductor Ltd., where he continues to push the boundaries of memory technology. His work has garnered attention for its innovative approach to non-volatile memory design.

Collaborations

Mikalai has collaborated with notable colleagues, including Yuriy Makarevich and Siarhei Shvedau. Their combined expertise contributes to the advancement of technology in their field.

Conclusion

Mikalai Audzeyeu is a key figure in the development of non-volatile memory technology, with a focus on innovative designs that improve efficiency and reduce layout area. His contributions are shaping the future of memory technology.