Yorktown Heights, NY, United States of America

Mihai At Sanduleanu

This inventor holds 1 USPTO granted patent. Top assignee: St-Ericsson Sa. Active years: 2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mihai At Sanduleanu. Retrieved from https://idiyas.com/inventor/mihai-at-sanduleanu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2011

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Mihai At Sanduleanu: Innovator in PTAT Current Source Technology

Introduction

Mihai At Sanduleanu is a notable inventor based in Yorktown Heights, NY (US). He has made significant contributions to the field of electronics, particularly in the development of current source technologies. His innovative work has led to the creation of a unique patent that addresses the challenges faced in integrated circuit design.

Latest Patents

Mihai holds a patent for an "All NPN-transistor PTAT current source." This invention relates to an improved PTAT current source and a respective method for generating a PTAT current. The technology involves generating opportune collector currents in two transistors by exploiting the logarithmic relationship between the base-emitter voltage and the collector current of a transistor. A resistor is utilized to sense the voltage difference between the base-emitter voltages of the two transistors, which can have either the same or different areas. A fraction of the current flowing through the resistor is forced into a transistor collector and mirrored by an output transistor to provide an output current. This principle allows for an all NPN-transistor PTAT current source that does not require pup transistors, as seen in conventional PTAT current sources. The invention is applicable to various integrated circuits needing a PTAT current reference, especially in advanced technologies like InP and GaAs, where p-type devices are unavailable. The PTAT current source circuit can be utilized in radio frequency power amplifiers, radio frequency tag circuits, and satellite microwave front-ends.

Career Highlights

Mihai is currently employed at ST-Ericsson SA, where he continues to innovate and contribute to the field of electronics. His work has been instrumental in advancing technologies that are crucial for modern electronic applications.

Collaborations

Mihai has collaborated with notable colleagues, including Lorenzo Tripodi and Pieter Gerrit Blanken. These collaborations have fostered an environment of innovation and have led to the development of cutting-edge technologies in their field.

Conclusion

Mihai At Sanduleanu is a distinguished inventor whose work in PTAT current source technology has made a significant impact on the electronics industry. His innovative approach and dedication to advancing technology continue to inspire future developments in integrated circuits.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…