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For the Inventor, By the Inventor

Cary, NC, United States of America

Michelle Turner Leonard

This inventor holds 5 USPTO granted patents. Top assignee: Cree Gmbh. Active years: 2001-2003.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Michelle Turner Leonard. Retrieved from https://idiyas.com/inventor/michelle-turner-leonard

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 5

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 4

Forward Citations = 658(Granted Patents)


Company Filing History:

goldMedal5 out of 2,307 
 
Cree Gmbh
 patents

Years Active: 2001-2003

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5 patents (USPTO):Explore Patents
1. 6630690 - Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure (2003-10-07),
2. 6492193 - Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure (2002-12-10),
3. 6373077 - Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure (2002-04-16),
4. 6201262 - Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure (2001-03-13),
5. 6187606 - Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure (2001-02-13),

Title: Michelle Turner Leonard: Innovator in Optoelectronic Devices

Introduction

Michelle Turner Leonard is a prominent inventor based in Cary, NC (US). She has made significant contributions to the field of optoelectronic devices, holding a total of 5 patents. Her work focuses on the development of advanced photonic devices that utilize Group III nitride materials.

Latest Patents

Among her latest patents is a groundbreaking invention titled "Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure." This optoelectronic device features a silicon carbide substrate and an optoelectronic diode with a Group III nitride active layer. The invention includes a buffer structure made from gallium nitride and indium gallium nitride, strategically placed between the silicon carbide substrate and the optoelectronic diode. Additionally, it incorporates a stress-absorbing structure with predetermined stress-relieving areas within the crystal structure of the buffer, allowing for controlled stress-induced cracking.

Career Highlights

Michelle is currently employed at Cree GmbH, a company known for its innovations in semiconductor technology. Her work at Cree has positioned her as a leader in the development of cutting-edge optoelectronic solutions.

Collaborations

Throughout her career, Michelle has collaborated with notable colleagues, including John Adam Edmond and Hua-shuang Kong. These partnerships have further enhanced her research and development efforts in the field.

Conclusion

Michelle Turner Leonard is a trailblazer in the realm of optoelectronic devices, with a strong portfolio of patents that reflect her innovative spirit. Her contributions continue to shape the future of photonic technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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