Michel Hehn

Title: Michel Hehn: Innovator in Spin-Dependent Tunnelling Technology

Introduction

Michel Hehn is a notable inventor based in Maisons Neuves, France. He is recognized for his contributions to the field of spin-dependent tunnelling technology. His innovative work has led to the development of a unique patent that showcases his expertise in this area.

Latest Patents

Michel Hehn holds a patent for a Spin-Dependent Tunnelling cell and method of formation thereof. This invention comprises a first barrier layer of a first material and a second barrier layer of a second material, which are sandwiched between a first ferromagnetic layer and a second ferromagnetic layer. The design of the first and second barrier layers is such that their combined thickness allows the Tunnelling Magnetoresistance versus voltage characteristic of the cell to achieve a maximum at a non-zero bias voltage. This innovative approach has significant implications for the advancement of tunnelling technology.

Career Highlights

Throughout his career, Michel Hehn has worked with prominent organizations, including Freescale Semiconductor, Inc. and the Centre National de la Recherche Scientifique (CNRS). His experience in these institutions has contributed to his development as a leading figure in his field.

Collaborations

Michel has collaborated with notable colleagues, including De Come Buttet and Stephane Zoll. These partnerships have further enriched his research and innovation efforts.

Conclusion

Michel Hehn's contributions to spin-dependent tunnelling technology exemplify his innovative spirit and dedication to advancing scientific knowledge. His patent and career achievements reflect his significant impact on the field.