Company Filing History:
Years Active: 2004
Title: Michael Xapsos: Innovator in Radiation-Resistant CMOS Technology
Introduction
Michael Xapsos is a notable inventor based in Alexandria, VA (US). He has made significant contributions to the field of semiconductor technology, particularly in developing devices that can withstand total dose radiation effects. His innovative work has implications for various applications, especially in environments where radiation exposure is a concern.
Latest Patents
Michael Xapsos holds a patent for "CMOS devices hardened against total dose radiation effects." This invention involves a CMOS or NMOS device that incorporates one or more n-channel FETs on a substrate. The device is designed to be resistant to total dose radiation failures. It includes a negative voltage source that applies a steady negative back bias to the substrate of the n-channel FETs, effectively mitigating leakage currents and thereby reducing total dose radiation effects.
Career Highlights
Xapsos is currently associated with the United States Navy, where he contributes his expertise in semiconductor technology. His work focuses on enhancing the reliability of electronic devices in challenging environments. With a patent portfolio that includes one significant patent, he has established himself as a key player in his field.
Collaborations
Throughout his career, Michael has collaborated with several professionals, including Geoffery Summers and Eric M Jackson. These collaborations have likely enriched his work and contributed to the advancement of technology in radiation-hardened devices.
Conclusion
Michael Xapsos is a distinguished inventor whose work in radiation-resistant CMOS technology has the potential to impact various industries. His innovative approach to mitigating radiation effects in semiconductor devices showcases his commitment to advancing technology in challenging environments.