Michael S Hockema

Title: Michael S. Hockema: Innovator in Gate Drive Circuit Technology

Introduction

Michael S. Hockema is a notable inventor based in Plano, TX (US). He has made significant contributions to the field of electrical engineering, particularly in the development of gate drive circuits. With a total of 3 patents to his name, Hockema's work has had a considerable impact on the industry.

Latest Patents

One of Hockema's latest patents is a transformer-based gate drive circuit. This innovative circuit is designed to generate asymmetric drive voltages. It comprises a gate drive transformer with a primary winding that responds to a pulse width modulation (PWM) input signal. This generates a bipolar signal with both positive and negative bias voltages. The secondary winding then generates a PWM output signal based on this bipolar signal. Additionally, a first charge pump is connected to the secondary winding to create a level-shifted PWM output signal. A second charge pump is also connected to the secondary winding, which generates a readjusted PWM output signal by decreasing a portion of the level-shifted PWM output signal. This design allows for effective control of a gate switching device, establishing ON and OFF conditions for the gate MOSFET.

Career Highlights

Hockema is currently employed at Raytheon Company, where he continues to innovate and develop advanced technologies. His expertise in electrical engineering and circuit design has made him a valuable asset to the company.

Collaborations

Hockema has collaborated with Sriram Chandrasekaran, a fellow engineer, to further enhance the development of their projects.

Conclusion

Michael S. Hockema's contributions to gate drive circuit technology exemplify his innovative spirit and dedication to advancing electrical engineering. His patents reflect a commitment to improving circuit design and functionality.