Company Filing History:
Years Active: 2020
Title: Michael Q Hovish: Innovator in Perovskite Technology
Introduction
Michael Q Hovish is a notable inventor based in Mountain View, CA. He has made significant contributions to the field of optoelectronic materials, particularly through his innovative patent related to perovskite layers. His work is essential in advancing the technology used in various electronic applications.
Latest Patents
Hovish holds a patent titled "Method for forming perovskite layers using atmospheric pressure plasma." This patent describes an improved deposition process for optoelectronically active perovskite materials. The method involves a two-step process where precursors are first deposited on a substrate. In the second step, these precursors are exposed to atmospheric pressure plasma, which efficiently cures them to create the desired perovskite thin film. The resulting films exhibit excellent optical properties combined with superior mechanical properties. Hovish's patent is a testament to his innovative approach, and he has 1 patent to his name.
Career Highlights
Michael Q Hovish is affiliated with Leland Stanford Junior University, where he continues to contribute to research and development in the field of materials science. His work has implications for various applications, including solar cells and other optoelectronic devices.
Collaborations
Hovish has collaborated with notable colleagues such as Florian Hilt and Nicholas Rolston. These collaborations have further enriched his research and have contributed to advancements in the field.
Conclusion
Michael Q Hovish is a pioneering inventor whose work on perovskite technology is shaping the future of optoelectronic materials. His innovative methods and collaborations highlight his commitment to advancing this important field.