The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2020

Filed:

Jan. 18, 2018
Applicant:

The Board of Trustees of the Leland Stanford Junior University, Palo Alto, CA (US);

Inventors:

Florian Hilt, San Jose, CA (US);

Michael Q. Hovish, Mountain View, CA (US);

Nicholas Rolston, Stanford, CA (US);

Reinhold H. Dauskardt, Menlo Park, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 1/02 (2006.01); H01J 37/32 (2006.01); H01L 31/18 (2006.01); H01L 33/00 (2010.01); H01L 31/032 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32825 (2013.01); H01J 37/32055 (2013.01); H01J 37/32073 (2013.01); H01J 37/32192 (2013.01); H01J 37/32348 (2013.01); H01L 31/032 (2013.01); H01L 31/186 (2013.01); H01L 31/1872 (2013.01); H01L 33/0095 (2013.01); Y02E 10/50 (2013.01);
Abstract

Improved deposition of optoelectronically active perovskite materials is provided with a two step process. In the first step, precursors are deposited on a substrate. In the second step, the deposited precursors are exposed to an atmospheric pressure plasma which efficiently cures the precursors to provide the desired perovskite thin film. The resulting films can have excellent optical properties combined with superior mechanical properties.


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