Michael L Barry

Title: Michael L Barry: Innovator in Low Temperature Plasma Nitridation

Introduction

Michael L Barry is a notable inventor based in Palo Alto, California. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent related to low temperature plasma nitridation processes.

Latest Patents

Barry holds a patent for a low temperature plasma nitridation process and its applications. This patent describes a method for preparing a silicon nitride layer on the surface of a silicon substrate. The process involves conducting a surface reaction in a vacuum chamber equipped with electrodes that are capacitively coupled to an RF generator. A reagent gas containing nitrogen is introduced into the chamber, and an RF voltage is applied to ionize and activate the gas. This results in nitrogen ions and other active species being directed into the silicon substrate, forming thin nitride films that serve as barriers for device isolation and dielectric components in electrical devices.

Career Highlights

Michael L Barry is associated with Fairchild Semiconductor Corporation, where he has contributed to advancements in semiconductor manufacturing processes. His work has been instrumental in enhancing the performance and reliability of electronic devices.

Collaborations

Barry has collaborated with notable colleagues such as Thomas Keyser and Bruce R Cairns, further enriching the innovation landscape in semiconductor technology.

Conclusion

Michael L Barry's contributions to low temperature plasma nitridation processes exemplify the impact of innovative thinking in the semiconductor industry. His work continues to influence the development of advanced electronic devices.