Michael J Mayo

Title: Michael J Mayo - Innovator in High-Electron Mobility Transistor Technology

Introduction

Michael J Mayo is a distinguished inventor based in Palo Alto, CA. He has made significant contributions to the field of electronics, particularly in the design and manufacturing of high-performance transistors. With a total of 5 patents to his name, Mayo continues to push the boundaries of innovation in his field.

Latest Patents

Mayo's latest patents include groundbreaking technologies that enhance the functionality of high-electron mobility transistors (HEMTs). One of his notable inventions is an AC-driven high electron mobility transistor device. This design introduces a bias layer into the HEMT, allowing it to operate solely on alternating current (AC) without requiring a negative direct current (DC) bias power supply. Another significant patent is for an active edge gripping end effector. This invention features a gripping mechanism that secures a wafer to the end effector using a pair of gripper arms that pivot between loading and engaging positions. The mechanism is driven by a motor assembly, which is monitored by a force feedback system to dynamically adjust the gripping force.

Career Highlights

Throughout his career, Michael J Mayo has worked with several prominent companies, including Asyst Technologies, Inc. and Maxtor Corporation. His experience in these organizations has contributed to his expertise in the field of electronics and innovation.

Collaborations

Mayo has collaborated with notable individuals in the industry, including Bill Richard Baker and Theodore W Rogers. These partnerships have further enriched his work and contributed to the development of his patented technologies.

Conclusion

Michael J Mayo is a prominent inventor whose work in high-electron mobility transistors and gripping mechanisms showcases his innovative spirit. His contributions continue to influence the field of electronics, and his patents reflect a commitment to advancing technology.