The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2014
Filed:
Dec. 21, 2012
Applicant:
Lockheed Martin Corporation, Bethesda, MD (US);
Inventors:
Michael J. Mayo, Palo Alto, CA (US);
Alfred A. Zinn, Palo Alto, CA (US);
Roux M. Heyns, San Francisco, CA (US);
Assignee:
Lockheed Martin Corporation, Bethesda, MD (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01); H01L 29/778 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/778 (2013.01); H01L 29/66431 (2013.01);
Abstract
A high performance high-electron mobility transistor (HEMT) design and methods of manufacturing the same are provided. This design introduces a bias layer in to the HEMT allowing the transistor to be fed with alternating current (AC) alone without the need for a negative direct current (DC) bias power supply.