Company Filing History:
Years Active: 2002-2004
Title: Michael J Hurt: Innovator in Radiation Hardened Transistor Technology
Introduction
Michael J Hurt is a notable inventor based in Falls Church, VA (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of radiation hardened silicon-on-insulator (SOI) transistors. With a total of 2 patents to his name, his work has implications for various applications, especially in environments where radiation exposure is a concern.
Latest Patents
One of Michael J Hurt's latest patents is focused on a radiation hardened silicon-on-insulator (SOI) transistor featuring a body contact. This innovative design includes a dielectric layer placed on a substrate, with a transistor structure situated on the dielectric layer. The structure comprises a body region, a source region, a drain region, and a gate layer. The body region is strategically formed on a first surface portion of the dielectric layer, while the source and drain regions are formed on contiguous surface portions. The gate layer is designed to induce a channel in the body region, facilitating the operation of the transistor. Additionally, multiple diffusions are integrated across the edges of the source region, ensuring ohmic connections to the body region via a body contact, and linking to the source region through a self-aligned salicide.
Career Highlights
Michael J Hurt is currently employed at BAE Systems Information and Electronic Systems Integration Inc. His role at the company allows him to leverage his expertise in semiconductor technology and contribute to advancements in electronic systems.
Collaborations
Throughout his career, Michael has collaborated with esteemed colleagues, including Robert Dockerty and Nadim F Haddad. These partnerships have fostered innovation and have been instrumental in the development of cutting-edge technologies.
Conclusion
Michael J Hurt stands out as a significant figure in the field of semiconductor innovation, particularly with his advancements in radiation hardened transistors. His contributions continue to influence the industry and pave the way for future developments.