Michael J Burns

Title: Michael J Burns: Pioneer in Monolithic Integrated High-Temperature Superconducting Devices

Introduction:

Michael J Burns is a renowned innovator based in Mountain View, CA, USA. With an impressive portfolio of seven patents, Burns has made significant contributions to the field of monolithic integrated high-temperature superconducting devices. His groundbreaking work has paved the way for advancements in semiconductor-superconductor structures and circuit fabrication.

Latest Patents:

Burns' latest patents showcase his expertise in developing methods for creating monolithic integrated high-Tc (critical temperature) superconductor-semiconductor structures. These patents outline novel techniques for fabricating active semiconductor and high-temperature superconducting devices on a single substrate, leading to the formation of monolithically integrated semiconductor-superconductor (MISS) structures.

These MISS structures employ a common insulating substrate, such as sapphire or yttria-stabilized zirconia, which enables the deposition of both semiconductor and high-temperature superconductor substructures. The semiconductor and superconductive regions are designed to operate at a common temperature of at least 77 K (Kelvin). Electrical interconnections between the separate regions can be established using normal metals, refractory metal silicides, or superconductors. The resulting circuits and devices demonstrate operating characteristics equivalent to those prepared on separate substrates, highlighting the potential for increased efficiency and functionality.

Career Highlights:

During his career, Michael J Burns has worked with esteemed institutions such as the University of Florida and The United States of America, represented by the Secretary of the Navy. His dedication and expertise have made significant contributions to the advancement of monolithic integrated high-temperature superconducting devices.

Collaborations:

Burns has collaborated with esteemed colleagues throughout his career, including notable individuals such as Noel M Holbrook and Paul R De La Houssaye. By working alongside these innovators, Burns has been able to combine his knowledge and skills with their expertise, leading to groundbreaking innovations in the field of monolithic integrated devices.

Conclusion:

Michael J Burns has emerged as a pioneering force in the field of monolithic integrated high-temperature superconducting devices. Through his patented inventions, Burns has demonstrated the potential for advanced circuit fabrication using a common substrate, resulting in monolithically integrated semiconductor-superconductor structures. With his continued dedication to innovation and collaboration, Burns is set to further enhance the capabilities and applications of these remarkable devices, contributing to the ongoing progress of the field.