Michael G Shlepr

Title: Michael G. Shlepr: Innovator in Semiconductor Technology

Introduction

Michael G. Shlepr is a notable inventor based in Palm Bay, FL (US), recognized for his contributions to semiconductor technology. He holds a total of 3 patents, showcasing his innovative approach to integrated circuit design.

Latest Patents

One of his latest patents is for a bonded substrate for an integrated circuit containing a planar intrinsic gettering zone. This invention involves a bonded semiconductor-on-insulator substrate that includes a wafer, a handle wafer, and an insulating bond layer. The wafer features a first layer of monocrystalline semiconductor material adjacent to its first surface and a second layer of undamaged monocrystalline semiconductor material adjacent to its second surface. Additionally, the wafer has a substantially planar intrinsic gettering zone of pure semiconductor material, with active gettering sites positioned between the first and second layers. These sites are formed by implanting ions of the semiconductor material through the first layer. The insulating bond layer effectively bonds the handle wafer to the first surface of the wafer.

Career Highlights

Throughout his career, Michael has worked with prominent companies in the semiconductor industry, including Intersil Americas Inc. and Intersil Corporation. His experience in these organizations has significantly contributed to his expertise in the field.

Collaborations

Michael has collaborated with notable coworkers such as Jack H. Linn and William H. Speece, further enhancing his innovative endeavors.

Conclusion

Michael G. Shlepr's work in semiconductor technology exemplifies his commitment to innovation and excellence. His patents reflect a deep understanding of integrated circuit design, making him a valuable contributor to the field.