Corvallis, OR, United States of America

Michael David Bice

This inventor holds 1 USPTO granted patent. Top assignee: Hewlett-Packard Development Company, L.p.. Active years: 2004.


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2004

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1 patent (USPTO):Explore Patents

Title: Michael David Bice: Innovator in Silicon-Based Dielectric Technology

Introduction

Michael David Bice is an accomplished inventor based in Corvallis, OR (US). He is known for his innovative contributions to the field of semiconductor technology. His work primarily focuses on the development of advanced electronic components that enhance energy efficiency and performance.

Latest Patents

One of Bice's notable patents is for a Silicon-based dielectric tunneling emitter. This invention features an electron supply layer and a silicon-based dielectric layer formed on the electron supply layer. The silicon-based dielectric layer is designed to be less than about 500 Angstroms thick. Additionally, an insulator layer can be formed on the electron supply layer, with openings defined within which the silicon-based dielectric layer is created. A cathode layer is placed on the silicon-based dielectric layer to provide a surface for energy emissions of electrons and/or photons. The emitter is subjected to an annealing process, which increases the supply of electrons tunneled from the electron supply layer to the cathode layer. This innovative design has the potential to significantly improve electronic device performance.

Career Highlights

Michael David Bice is currently employed at Hewlett-Packard Development Company, L.P. His role at this leading technology company allows him to work on cutting-edge projects that push the boundaries of electronic innovation. Bice's expertise in semiconductor technology has made him a valuable asset to his team.

Collaborations

Throughout his career, Bice has collaborated with notable colleagues, including Zhizhang Chen and Ronald L. Enck. These partnerships have fostered a creative environment that encourages the exchange of ideas and the development of groundbreaking technologies.

Conclusion

Michael David Bice is a prominent figure in the field of semiconductor technology, with a focus on silicon-based dielectric innovations. His contributions, particularly in the area of tunneling emitters, demonstrate his commitment to advancing electronic performance. Bice's work continues to influence the future of technology and innovation.

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