Michael David Bic

Title: Michael David Bic: Innovator in Silicon-Based Dielectric Technology

Introduction

Michael David Bic is an accomplished inventor based in Corvallis, OR (US). He holds a patent for a groundbreaking technology that enhances electron emission through a silicon-based dielectric tunneling emitter. His innovative work contributes significantly to advancements in electronic components.

Latest Patents

Michael David Bic's notable patent is titled "Silicon-based dielectric tunneling emitter." This invention features an electron supply layer with a silicon-based dielectric layer formed on it. The dielectric layer is designed to be less than about 500 Angstroms thick. Additionally, an insulator layer may be included, which has openings where the silicon-based dielectric layer is formed. A cathode layer is placed on top of the dielectric layer to facilitate energy emissions of electrons and/or photons. The emitter undergoes an annealing process to enhance the supply of electrons tunneled from the electron supply layer to the cathode layer. He holds 1 patent.

Career Highlights

Michael David Bic is associated with Hewlett-Packard Development Company, L.P., where he applies his expertise in electronic engineering and innovation. His work at Hewlett-Packard has allowed him to explore and develop advanced technologies that push the boundaries of electronic devices.

Collaborations

Throughout his career, Michael has collaborated with notable colleagues, including Zhizhang Chen and Ronald L. Enck. These partnerships have fostered a creative environment that encourages the development of innovative solutions in the field of electronics.

Conclusion

Michael David Bic is a prominent inventor whose contributions to silicon-based dielectric technology have the potential to revolutionize electronic components. His patent and work at Hewlett-Packard exemplify his commitment to innovation in the field.