The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2005
Filed:
Jan. 12, 2004
Zhizhang Chen, Corvallis, OR (US);
Michael David Bic, Corvallis, OR (US);
Ronald L. Enck, Corvallis, OR (US);
Michael J. Regan, Corvallis, OR (US);
Thomas Novet, Corvallis, OR (US);
Paul J. Benning, Corvallis, OR (US);
Zhizhang Chen, Corvallis, OR (US);
Michael David Bic, Corvallis, OR (US);
Ronald L. Enck, Corvallis, OR (US);
Michael J. Regan, Corvallis, OR (US);
Thomas Novet, Corvallis, OR (US);
Paul J. Benning, Corvallis, OR (US);
Hewlett-Packard Development Company, L.P., Houston, TX (US);
Abstract
An emitter has an electron supply layer and a silicon-based dielectric layer formed on the electron supply layer. The silicon-based dielectric layer is preferably less than about 500 Angstroms. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within which the silicon-based dielectric layer is formed. A cathode layer is formed on the silicon-based dielectric layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.