Company Filing History:
3 out of 164,197 
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Years Active: 2008-2010
Title: Michael C Smits: Innovator in FET Device Technology
Introduction
Michael C Smits is a notable inventor based in Poughkeepsie, NY (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of methods for enhancing the performance of field-effect transistors (FETs). With a total of 3 patents to his name, his work has had a considerable impact on the industry.
Latest Patents
One of his latest patents is titled "Method of forming nitride films with high compressive stress for improved PFET device performance." This innovative method involves creating a FET device where a nitride layer is deposited over the PFET gate structure. The nitride layer exhibits a compressive stress greater than about 2.8 GPa, which significantly enhances the performance of the PFET. The deposition process utilizes a high-density plasma (HDP) technique, with the substrate placed on an electrode receiving a bias power ranging from about 50 W to about 500 W. This power is characterized as high-frequency, supplied by an RF generator operating at 13.56 MHz. Additionally, the FET device may include NFET gate structures, with a blocking layer deposited over these structures to ensure that the nitride layer does not contact them after the blocking layer is removed. The nitride layer's thickness ranges from about 300-2000 Å.
Career Highlights
Throughout his career, Michael C Smits has worked with prominent companies in the technology sector, including IBM and Novellus Systems Incorporated. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking advancements in semiconductor technology.
Collaborations
Michael has collaborated with notable professionals in his field, including Richard Anthony Conti and Ronald P Bourque. These collaborations have further enriched his work and have led to innovative solutions in FET device performance.
Conclusion
Michael C Smits is a distinguished inventor whose work in FET technology continues to influence the semiconductor industry. His innovative methods and collaborations highlight his commitment to advancing technology and improving device performance.