Company Filing History:
Years Active: 2002-2004
Title: Innovations of Micahel L Alles in Semiconductor Technology
Introduction
Micahel L Alles is a notable inventor based in Beverly, MA (US), recognized for his contributions to semiconductor technology. With a total of two patents to his name, he has made significant advancements in the field of semiconductor-on-insulator structures.
Latest Patents
Micahel's latest patents focus on an innovative implantation process using sub-stoichiometric oxygen doses at different energies. This invention provides a method for creating high-quality semiconductor-on-insulator structures, such as silicon-on-insulator structures. The method employs sequential steps of ion implantation and high-temperature annealing to produce structures with a top silicon layer thickness ranging from 10-250 nm and a buried oxide layer thickness of 30-300 nm. The buried oxide layer exhibits a breakdown field greater than 5 MV/cm, and the density of silicon inclusions in the BOX region is less than 2×10 cm. This process can be utilized to create an entire SOI wafer or to create patterned SOI regions that integrate SOI regions with non-SOI regions.
Career Highlights
Micahel L Alles is currently associated with Ibis Technology Corporation, where he continues to innovate in the semiconductor field. His work has contributed to the advancement of semiconductor technologies, enhancing the quality and efficiency of semiconductor devices.
Collaborations
Micahel has collaborated with notable coworkers, including Robert Dolan and Bernhardt F Cordts, III. These collaborations have further enriched his research and development efforts in semiconductor technology.
Conclusion
Micahel L Alles stands out as a significant figure in the field of semiconductor innovations. His patents and ongoing work at Ibis Technology Corporation reflect his commitment to advancing technology in this critical area.