Nanjing, China

Miao Wang

This inventor holds 1 USPTO granted patent. Top assignee: Nanjing University. Active years: 2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Miao Wang. Retrieved from https://idiyas.com/inventor/miao-wang-oqtv3bpy

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2019

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1 patent (USPTO):Explore Patents

Title: Miao Wang - Innovator in Memristor Technology

Introduction

Miao Wang is a prominent inventor based in Nanjing, China. He has made significant contributions to the field of electronics, particularly in the development of high temperature resistant memristors. His innovative work has garnered attention for its potential applications in various technological advancements.

Latest Patents

Miao Wang holds a patent for a "High temperature resistant memristor based on two-dimensional covalent crystal and preparation method thereof." This invention features a memristor that includes a bottom electrode, a dielectric, and a top electrode. The dielectric is made from a two-dimensional covalent crystal material or a doped variant, which enhances its thermal stability. The design utilizes the high thermal stability of the lattice structure of two-dimensional transition metals, making it suitable for high-temperature applications.

Career Highlights

Miao Wang is affiliated with Nanjing University, where he continues to engage in research and development in the field of electronics. His work focuses on advancing memristor technology, which is crucial for the future of electronic devices.

Collaborations

Miao Wang collaborates with Feng Miao, contributing to the innovative research environment at Nanjing University.

Conclusion

Miao Wang's contributions to memristor technology highlight his role as an influential inventor in the field of electronics. His patented innovations pave the way for future advancements in high-temperature applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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