Years Active: 2024
Title: Mi Hwa Lim: Innovator in Memory Device Technology.
Introduction
Mi Hwa Lim is a notable inventor based in Yongin-si, South Korea. He has made significant contributions to the field of memory devices, showcasing his expertise through innovative patents. His work focuses on enhancing the functionality and efficiency of memory technology.
Latest Patents
One of Mi Hwa Lim's key patents is titled "Integrated counter in memory device." This invention involves a memory device that includes a memory cell array, where memory cells are organized in a matrix format connected to wordlines and bitlines. The control circuit within the device is designed to program the memory cells or manage read operations based on various parameters such as start address, burst length, latency length, and commands from a host. The control circuit features a pulse generation unit that produces register pulses and counter pulses synchronized with an operation clock. Additionally, a counter is included to set the start address in sync with the register pulses, count the number of counter pulses, and increment the address from the start address to the total of the start address and burst length. This innovative approach enhances the performance of memory devices.
Career Highlights
Throughout his career, Mi Hwa Lim has demonstrated a commitment to advancing memory technology. His patent reflects a deep understanding of the complexities involved in memory device design and operation. Lim's work is instrumental in pushing the boundaries of what is possible in this field.
Collaborations
Mi Hwa Lim has collaborated with talented individuals such as Young Seung Kim and Dong Min Lim. These partnerships have contributed to the development of innovative solutions in memory technology.
Conclusion
Mi Hwa Lim stands out as a significant figure in the realm of memory device innovation. His contributions, particularly through his patent on integrated counters, highlight his expertise and commitment to advancing technology. His work continues to influence the development of efficient memory solutions.