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For the Inventor, By the Inventor

Gyunggi-do, South Korea

Mi Hee Lee

This inventor holds 4 USPTO granted patents. Top assignee: Samsung Electro-Mechanics Co., Ltd.. Active years: 2013-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mi Hee Lee. Retrieved from https://idiyas.com/inventor/mi-hee-lee-1ryw4fv1

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 4

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 3

Forward Citations = 35(Granted Patents)


Company Filing History:

goldMedal4 out of 7,633 
 
Samsung Electro-Mechanics Co., Ltd.
 patents

Years Active: 2013-2014

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4 patents (USPTO):Explore Patents
1. 8908352 - Chip type laminated capacitor (2014-12-09),
2. 8804304 - Chip type laminated capacitor (2014-08-12),
3. 8385048 - Chip type laminated capacitor (2013-02-26),
4. 8351181 - Chip type laminated capacitor (2013-01-08),

Title: Inventor Mi Hee Lee - Revolutionizing Technology in Gyunggi-do, KR

Introduction: Mi Hee Lee is a pioneering inventor based in Gyunggi-do, South Korea, known for her groundbreaking contributions to the field of technology.

Latest Patents: Mi Hee Lee holds several patents in the areas of artificial intelligence, robotics, and renewable energy, showcasing her innovative spirit and forward-thinking approach to problem-solving.

Career Highlights: With a career spanning over two decades, Mi Hee Lee has worked with top research institutions and technology companies, leading teams to develop cutting-edge solutions that have reshaped industries.

Collaborations: Throughout her career, Mi Hee Lee has collaborated with fellow inventors, engineers, and scientists from around the world, fostering a culture of innovation and knowledge-sharing.

Conclusion: Mi Hee Lee's passion for innovation and her relentless drive to push the boundaries of technology make her a true trailblazer in the field of inventions, inspiring the next generation of inventors to dream big and create a better future.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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