Villeneuve d'Ascq, France

Mhamad-Hassanein Rabah

This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: Université Gustave Eiffel. Active years: 2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mhamad-Hassanein Rabah. Retrieved from https://idiyas.com/inventor/mhamad-hassanein-rabah

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


 

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2021

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1 patent (USPTO):Explore Patents

Title: Mhamad-Hassanein Rabah: Innovator in Antenna Efficiency

Introduction

Mhamad-Hassanein Rabah is a notable inventor based in Villeneuve d'Ascq, France. He has made significant contributions to the field of antenna technology, particularly in improving the efficiency of electrically small antennas. His innovative approach has garnered attention in the research community.

Latest Patents

Mhamad-Hassanein Rabah holds a patent for a method aimed at enhancing the efficiency of an electrically small antenna. This method involves specific steps designed to optimize performance, showcasing his expertise in the field. He has 1 patent to his name, reflecting his commitment to advancing technology.

Career Highlights

Currently, Mhamad-Hassanein Rabah is affiliated with Université Gustave Eiffel, where he continues to engage in research and development. His work at the university allows him to collaborate with other experts and contribute to academic advancements in antenna technology.

Collaborations

Mhamad-Hassanein Rabah has worked alongside colleagues such as Divitha Seetharamdoo and Hussein Srour. These collaborations have enriched his research and fostered a dynamic environment for innovation.

Conclusion

Mhamad-Hassanein Rabah is a dedicated inventor whose work in antenna efficiency exemplifies the spirit of innovation. His contributions to the field are significant, and his ongoing research promises to yield further advancements in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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