This inventor holds 1 USPTO granted patent. Top assignee: Fudan University. Active years: 2022.
Company Filing History:
Years Active: 2022
Title: Menghan Ao - Innovator in Non-Volatile Ferroelectric Memory
Introduction
Menghan Ao is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of memory technology, particularly through his innovative work on non-volatile ferroelectric memory. His research and inventions have the potential to impact various applications in electronics and data storage.
Latest Patents
Menghan Ao holds a patent for a non-volatile ferroelectric memory and a method of preparing the same. This patent describes a ferroelectric memory that includes a ferroelectric storage layer, a first electrode, and a second electrode. The design features buried conductive layers formed by patterning the surface of the ferroelectric storage layer, along with an electrode layer on top. When a write signal is applied between the electrodes, the electric domains within the ferroelectric storage layer can be reversed, establishing a conductive passage that connects the two electrodes.
Career Highlights
Menghan Ao is affiliated with Fudan University, where he continues to advance his research in memory technologies. His work is characterized by a commitment to innovation and excellence in the field of electronics.
Collaborations
He collaborates with notable colleagues, including Anquan Jiang and Xiaojie Chai, who contribute to his research endeavors and help drive forward the development of new technologies.
Conclusion
Menghan Ao's contributions to non-volatile ferroelectric memory exemplify the innovative spirit of modern inventors. His work not only enhances the understanding of memory technology but also paves the way for future advancements in the field.