Meng-Shan Wu

Title: Innovations by Meng-Shan Wu in Semiconductor Technology

Introduction

Meng-Shan Wu is a notable inventor based in Santa Clara, CA, specializing in semiconductor technology. He has made significant contributions to the field, particularly through his innovative patent that addresses challenges in semiconductor device manufacturing.

Latest Patents

Meng-Shan Wu holds a patent titled "Method of in-situ selective metal removal via gradient oxidation for gapfill." This patent describes a method and apparatus for achieving a gap-fill in semiconductor devices. The process involves forming a metal seed layer on an exposed surface of the substrate, which contains features such as trenches or vias. A gradient oxidation process is then performed to oxidize portions of the metal seed layer, preferentially targeting the field region of the substrate. Following this, an etch back process is executed to remove or reduce the oxidized portion of the seed layer, ultimately allowing for a metal gap-fill process to fill the features with a gap fill material. This innovative approach enhances the efficiency and effectiveness of semiconductor manufacturing.

Career Highlights

Meng-Shan Wu is currently employed at Applied Materials, Inc., a leading company in the semiconductor equipment industry. His work at Applied Materials has positioned him as a key contributor to advancements in semiconductor technology.

Collaborations

Meng-Shan Wu has collaborated with notable colleagues, including Xianmin Tang and Chun-Chieh Wang. Their combined expertise has fostered innovation and development in their respective projects.

Conclusion

Meng-Shan Wu's contributions to semiconductor technology through his innovative patent demonstrate his commitment to advancing the field. His work continues to influence the manufacturing processes of semiconductor devices, showcasing the importance of innovation in technology.