Company Filing History:
Years Active: 2002-2003
Title: Menchem Vofsy: Innovator in Semiconductor Technology
Introduction
Menchem Vofsy is a notable inventor based in Kiryat Tivon, Israel. He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of semiconductor chips. With a total of 2 patents to his name, Vofsy's work has advanced the capabilities of CMOS devices and non-volatile memory cells.
Latest Patents
Vofsy's latest patents include innovative methods for fabricating semiconductor chips that incorporate CMOS devices and fieldless arrays. One of his patents details a method for etching an oxide-nitride-oxide (ONO) layer on a semiconductor wafer. This method involves removing the upper oxide layer and part of the nitride layer using an isotropic plasma enhanced etch, followed by the removal of the remaining nitride layer and a portion of the lower oxide layer. This technique is crucial for forming gate electrodes and diffusion bit lines in a fieldless array of non-volatile memory cells. Another patent focuses on the fabrication of a fieldless array of floating gate transistors, which includes the formation of an ONO layer over a semiconductor substrate and the implantation of impurities to create bit line regions and floating gate structures.
Career Highlights
Menchem Vofsy is currently employed at Tower Semiconductor Ltd., where he continues to push the boundaries of semiconductor technology. His expertise in the field has positioned him as a key player in the development of advanced semiconductor solutions.
Collaborations
Vofsy has collaborated with notable colleagues such as Efraim Aloni and Shai Kfir, contributing to various projects that enhance semiconductor fabrication techniques.
Conclusion
Menchem Vofsy's innovative work in semiconductor technology exemplifies the impact of dedicated inventors in advancing modern electronics. His patents reflect a commitment to improving the efficiency and functionality of semiconductor devices.