Taoyuan, Taiwan

Men-Han Huang

This inventor holds 2 USPTO granted patents and 4 published patent applications. Top assignees: Atomic Energy Council, Institute of Nuclear Energy Research. Active years: 2010-2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Men-Han Huang. Retrieved from https://idiyas.com/inventor/men-han-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 2 

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2010-2013

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2 patents (USPTO):Explore Patents

Title: Men-Han Huang: Innovator in Non-Thermal Plasma Technology

Introduction

Men-Han Huang is an inventor based in Dasi Township, Taiwan. He is known for his innovative work in the field of non-thermal plasma technology. Although he currently holds no granted patents, his contributions to the field are noteworthy.

Latest Patent Applications

Men-Han Huang has submitted a patent application for an atmospheric pressure non-thermal plasma reactor with a dual discharging-electrode structure. This innovative reactor includes a chamber with a first electrode unit located at the top and a second electrode unit at the bottom. The design creates a plasma treatment region between these two units. The first electrode unit features arrays of dual discharging-electrode structures embedded in an isolating layer. A high-voltage power supply connects both electrode units, while an external gas introducing unit allows auxiliary gas into the plasma reaction region. This setup enhances the gas discharge process, promoting plasma-assisted chemical reactions for cleaning purposes.

Conclusion

Men-Han Huang's work in non-thermal plasma technology represents a significant step forward in the field. His innovative designs and applications have the potential to impact various industries, particularly in cleaning and chemical processing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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